ST introduces 40V STripFET F8 MOSFET transistor with better energy-saving and noise reduction features

June 23, 2022 - ST's 40V MOSFET transistors STL320N4LF8 and STL325N4LF8AG reduce on-resistance and switching losses while optimizing body parasitic diode characteristics to reduce energy consumption and noise in power conversion, motor control and power distribution circuits.

The new 40V N-channel enhancement MOSFET utilizes the latest generation STPOWER STripFET F8 oxide filled trench technology to achieve superior quality factor. The STL320N4LF8 and STL325N4LF8AG have maximum on-resistance (Rds(on)) of 0.8 milliohms and 0.75 milliohms at a gate source voltage (VGS) of 10V, respectively. The very low die area (Rds(on)) resistance of the new MOSFETs allows for the space-saving and thermally efficient PowerFLAT 5x6 package.

ST's advanced STripFET F8 technology offers excellent switching speeds and low chip capacitance to minimize dynamic parameters such as gate leakage charge and improve system energy efficiency. Designers can select switching frequencies in the 600kHz to 1MHz range, allowing the use of smaller capacitors and magnetic components, saving circuit size and bill of materials costs and increasing power density in end applications.

Appropriate output capacitance and associated equivalent series resistance prevents spikes in the drain source voltage and ensures shorter burst oscillation times when the tube is turned off. With this and the soft recovery characteristics of the body diode, the STL320N4LF8 and STL325N4LF8AG emit lower electromagnetic interference (EMI) than other similar devices on the market. In addition, the reverse recovery charge of the body parasitic diode is small, minimizing the energy loss of the hard switching topology.

The gate threshold voltage (VGS(th)) is tightly controlled in the STL320N4LF8 and STL325N4LF8AG to ensure that the threshold voltage difference between devices is small enough to parallel multiple MOSFET power tubes to handle larger currents. The STL320N4LF8 and STL325N4LF8AG are the first STPOWER STripFET F8 MOSFET devices to meet industry and AEC-Q101 automotive standards, respectively, and are ideal for battery-powered products and computing, telecommunications, lighting, and general-purpose power conversion applications.

The STL320N4LF8 and STL325N4LF8AG are now in volume production.